Datasheet4U Logo Datasheet4U.com

PNMTO600V4 - N-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

📥 Download Datasheet

Datasheet Details

Part number PNMTO600V4
Manufacturer Prisemi
File Size 119.32 KB
Description N-Channel MOSFET
Datasheet download datasheet PNMTO600V4 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PNM Precision Thin Film Non-Magnetic Resistor Vishay
PNM-2751L-R MICROPHONE Projects Unlimited
PNM-3546L-R MICROPHONE Projects Unlimited
PNM-5250L-R MICROPHONE Projects Unlimited
PNM0402 Precision Thin Film Non-Magnetic Resistor Vishay

Other Datasheets by Prisemi

Part Number Description
PNMTOF600V4 N-Channel MOSFET
PNMT100V2 N-Channel MOSFET
PNMT20V2A N-Channel MOSFET
PNMT20V2SA N-Channel MOSFET
PNMT20V6 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω) ID(A) 1.9@ VGS=10V 4 G（1） S（3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Diode Forward Voltage Maximum Body-Diode Continuous Current Maximum Body-Diode Pulse Current BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM ID =250μA,VGS=0V VDS =600V,VGS=0V VDS =0V,VGS=±30V VDS =VGS, ID =250μA VGS=10V, ID =0.