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PNMTO600V4 Datasheet Preview

PNMTO600V4 Datasheet

N-Channel MOSFET

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PNMTO600V4 PNMTOF600V4
N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low
on-resistance.
D2
VDS(V)
600
MOSFET Product Summary
RDS(on)()
ID(A)
1.9@ VGS=10V
4
G1
S3
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Symbol
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Tran conductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Maximum Body-Diode Pulse Current
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
ID =250μA,VGS=0V
VDS =600V,VGS=0V
VDS =0V,VGS=±30V
VDS =VGS, ID =250μA
VGS=10V, ID =0.65A
VDS =40V, ID =2A
IS=1A,VGS=0V
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
SWITCHING PARAMETERS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
td(on)
td(off)
tr
tf
VDS=300V, VGS =10V,
RG=25,
ID =4A
Min. Typ. Max. Units
600 - V
- - 1 μA
-
-
±100
nA
2 4V
-
1.9 2.2
7.4 S
0.77 1
V
4A
16 A
400 511 615 pF
40 51 65 pF
3.5 4.4 5.3 pF
- 20.2
- 36
28.7
27
ns
ns
ns
ns
Rev.06
1 www.prisemi.com




Prisemi

PNMTO600V4 Datasheet Preview

PNMTO600V4 Datasheet

N-Channel MOSFET

No Preview Available !

N-Channel MOSFET
Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
TA=25
Total Power Dissipation
Derate above 25ºC
Typical Characteristics
8
8V
6
6.5V
6V
4
2 5.5V
PNMTO600V4 PNMTOF600V4
Symbol
VDS
VGS
ID
ID
PD
PD
Value
600
±30
4.0
16.0
104
0.83
Units
V
V
A
A
W
W /ºC
10
VDS=40V
-55ºC
1.0
25ºC
125ºC
0
0 10 20
VDS – Drain Source Voltage (V)
Fig 1. On-Region Characteristics
30
4
3 VGS=10V
2
0.1
2
3
4 68
VGS – (V)
Fig 2. Transfer Characteristics
10
2 VGS=10V
ID=2A
1
1
0 2 4 6 8 10
ID - (A)
Fig 3. On-Resistance vs. Drain Current and Gate Voltage
0
-100 -50
0
50 100
150
Temperature (ºC)
200
Fig 4. On-Resistance vs. Junction Temperature
Rev.06
2 www.prisemi.com


Part Number PNMTO600V4
Description N-Channel MOSFET
Maker Prisemi
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PNMTO600V4 Datasheet PDF






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