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PNMTO600V4 - N-Channel MOSFET

Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PNMTO600V4
Manufacturer Prisemi
File Size 119.32 KB
Description N-Channel MOSFET
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PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω) ID(A) 1.9@ VGS=10V 4 G（1） S（3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Diode Forward Voltage Maximum Body-Diode Continuous Current Maximum Body-Diode Pulse Current BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM ID =250μA,VGS=0V VDS =600V,VGS=0V VDS =0V,VGS=±30V VDS =VGS, ID =250μA VGS=10V, ID =0.
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