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PNMT50V02E - N-Channel MOSFET

General Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PNMT50V02E
Manufacturer Prisemi
File Size 136.83 KB
Description N-Channel MOSFET
Datasheet download datasheet PNMT50V02E Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 50 MOSFET Product Summary RDS(on)(Ω) ID(A) 1@VGS=10V 0.22 PNMT50V02E N-Channel MOSFET D (3) G (1) Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous Drain Current-Pulsed(Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient S (2) Symbol VDS VGS ID IDM PD TJ, TSTG Symbol RθJA Maximum 50 ±20 0.22 0.88 0.35 -55 to 150 Maximum 350 Units V V A A W ℃ Units ℃/W Rev.06 1 www.prisemi.