N-Channel MOSFET
PNMT50V02E
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol
Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID =250μA,VGS=0V
Zero Gate Voltage Drain Current IDSS VDS =50V,VGS=0V
Gate-Body Leakage Current
IGSS VDS =0V,VGS=±12V
On Characteristics(Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Forward Transonductance
VGS(th)
RDS(ON)
VSD
gfs
VDS =VGS, ID =250μA
VGS=5V, ID =0.2A
VGS=10V, ID =0.22A
VGS=0V,IS=0.22A
VDS=10V,ID=0.2A
Dynamic Characteristics(Note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Switching Characteristics(Note 4)
Ciss
Coss
Crss
Qg
VDS=25V, VGS=0V,
f=1.0MHz
VGS=10V, VDS=25V,
ID =0.2A
Turn-On Delay Time
td(on)
Turn-Off Delay Time
Turn-On Rise Time
td(off)
tr
VDD =30V, VGS =10V,
RG=6Ω,
ID =0.22A
Turn-On Fall Time
tf
Diode Forward Current(Note 2)
IS
Diode Forward Voltage(Note 3)
VSD VGS=0V, IS =0.22A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10 sec.
3. Pulse Test Pulse Width ≤300μs, Duty Cycle ≤2%.
4. Guaranteed by design, not subject to production.
Min. Typ. Max. Units
50 - V
- - 1 μA
±10 μA
0.6 1.1 1.6
- 1.3 3
12
- 1.3
0.2
V
Ω
V
S
30
15 pF
6
2.4 nC
- 5 ns
- 60 ns
- 5 ns
- 35 ns
0.22 A
1.3 V
Rev.06
2 www.prisemi.com
