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Potens semiconductor

PMEN2P7002S Datasheet Preview

PMEN2P7002S Datasheet

P-Channel MOSFETs

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60V P-Channel MOSFETs
PMEN2P7002S
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
BVDSS
-60V
RDSON
4
ID
-0.3A
Features
-60V,-0.3A, RDS(ON) =4Ω@VGS=-10V
Improved dv/dt capability
Fast switching
Green Device Available
G-S ESD Protection Diode Embedded
D Applications
G
S
Power Management in Notebook Computer
Portable Equipment and Battery Powered
G Systems.
LED Lighting
S
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TA=25)
Drain Current Continuous (TA=70)
Drain Current Pulsed1
Power Dissipation (TA=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
±20
-0.3
-0.24
-1.2
1
8
-50 to 150
-50 to 150
Units
V
V
A
A
A
W
mW/
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
125
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PMEN2P7002S Datasheet Preview

PMEN2P7002S Datasheet

P-Channel MOSFETs

No Preview Available !

60V P-Channel MOSFETs
PMEN2P7002S
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VDS=60V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
-60
---
---
---
---
Typ.
---
0.03
---
---
---
Max.
---
---
1
30
±10
Unit
V
V/
uA
uA
uA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
VGS=10V , ID=0.3A
VGS=4.5V , ID=0.2A
VGS=VDS , ID =250uA
--- 2.3
4
--- 2.9
5
-1 -1.5 -2
V
--- -2.1 --- mV/
Dynamic and switching Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
--- 41 ---
--- 13 --- pF
--- 8 ---
Min.
---
---
---
Typ.
---
---
---
Max.
-0.3
-0.6
-1.3
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PMEN2P7002S
Description P-Channel MOSFETs
Maker Potens semiconductor
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