* 60V,175A, RDS(ON) =3.2mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Ne.

TO247 Pin Configuration D G BVDSS 60V RDSON 3.2m ID 175A Features
* 60V,175A, RDS(ON) =3.2mΩ@VGS = 10V
.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDX0970

PDX0980

PDX4970

PDX8970

PD-20

PD-3100

PD-5100

PD-9002GHO

PD-9501GO

PD-CP42AU

PD-NPM-0305EP

PD-SSI

PD001

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