* 40V, 320A, RDS(ON) =1.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available TO247 Pin Configuration D S GD G S Appli.

BVDSS 40V RDSON 1.5m ID 320A Features
* 40V, 320A, RDS(ON) =1.5mΩ@VGS = 10V
* Improved dv/dt capability

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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