PDX0980 Datasheet, Potens semiconductor

* 100V,170A, RDS(ON) =4mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Net.

TO247 Pin Configuration D S D G G S BVDSS 100V RDSON 4 m ID 170A Features
* 100V,170A, RDS(ON) =4mΩ@VGS =.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.