PDP6970 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 60V,170A, RDS(ON) =2.2mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* M.

Application

TO220 Pin Configuration D GDS G S BVDSS 60V RDSON 2.2m ID 170A Features
* 60V,170A, RDS(ON) =2.2mΩ @VGS =.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery