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PDP6902 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V,114A, RDS(ON) =4.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PDP6902
Manufacturer Potens semiconductor
File Size 749.87 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDP6902 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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60V N-Channel MOSFETs PDP6902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D S GD G S BVDSS 60V RDSON 4.5m ID 114A Features  60V,114A, RDS(ON) =4.
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