* 60V,114A, RDS(ON) =4.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* PowerTools
* Quick Char.

TO220 Pin Configuration D S GD G S BVDSS 60V RDSON 4.5m ID 114A Features
* 60V,114A, RDS(ON) =4.5mΩ@VGS =.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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