* 65V,115A, RDS(ON) =4.7mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Ne.

TO220 Pin Configuration D GDS G S BVDSS 65V RDSON 4.7m ID 115A Features
* 65V,115A, RDS(ON) =4.7mΩ@VGS = .

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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