PDP6976-5 - N-Channel MOSFET

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

65V,115A, RDS(ON) =4.7mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDP6976-5 n-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDP6976-5
Manufacturer	Potens semiconductor
File Size	862.80 KB
Description	N-Channel MOSFET
Datasheet	PDP6976-5 Datasheet

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65V N-Channel MOSFETs PDP6976-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D GDS G S BVDSS 65V RDSON 4.7m ID 115A Features  65V,115A, RDS(ON) =4.