* 100V,4A , RDS(ON)=120mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Netwo.

SOT223 Pin Configuration D S D G G D S PDL0956 BVDSS 100V RDSON 120m ID 4A Features
* 100V,4A , RDS(ON)=1.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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