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PDL0954 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,1.7A , RDS(ON)=310mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PDL0954
Manufacturer Potens semiconductor
File Size 494.68 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDL0954 Datasheet
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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D S D G G D S PDL0954 BVDSS 100V RDSON 310m ID 1.7A Features  100V,1.
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