PDL0906 mosfets equivalent, n-channel mosfets.
* 100V,6.5A, RDS(ON) =95mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Ne.
SOT223 Pin Configuration
D S
D G
G
D S
BVDSS 100V
RDSON 95m
ID 6.5A
Features
* 100V,6.5A, RDS(ON) =95mΩ@VG.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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