* 30V,7.5A, RDS(ON) =24mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB.

SOT89 Pin Configuration D S D G G D S BVDSS 30V RDSON 24m ID 7.5A Features
* 30V,7.5A, RDS(ON) =24mΩ @VGS .

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDK3908

PDK3612

PDK-P-M

PDK2314

PDK2612A

PDK6912

PDK82C13

PDK82C13-D

PD-20

PD-3100

PD-5100

PD-9002GHO

PD-9501GO

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