* 20V, 6.5A, RDS(ON) =32mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications App.

SOT89 Pin Configuration D D S D G G S BVDSS 30V RDSON 32m ID 6.5A Features
* 20V, 6.5A, RDS(ON) =32mΩ@VGS .

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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