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PDK3612 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 6.5A, RDS(ON) =32mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet preview – PDK3612

Datasheet Details

Part number PDK3612
Manufacturer Potens semiconductor
File Size 386.51 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDK3612 Datasheet
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Full PDF Text Transcription

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30V N-Channel MOSFETs PDK3612 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT89 Pin Configuration D D S D G G S BVDSS 30V RDSON 32m ID 6.5A Features  20V, 6.5A, RDS(ON) =32mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.
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