* 20V/6.5A, RDS(ON) =22mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB.

SOT89 Pin Configuration D S D G G D S BVDSS 20V RDSON 22m ID 6.5A Features
* 20V/6.5A, RDS(ON) =22mΩ@VGS =.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDK2314

PDK-P-M

PDK3612

PDK3908

PDK3912

PDK6912

PDK82C13

PDK82C13-D

PD-20

PD-3100

PD-5100

PD-9002GHO

PD-9501GO

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts