PDH50N20 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 200V,60A, RDS(ON) =24mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Net.

Application

TO263 Pin Configuration G S D G D S BVDSS 200V RDSON 24m ID 60A Features
* 200V,60A, RDS(ON) =24mΩ@VGS = 1.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery