* 100V,190A, RDS(ON) =3.6mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* N.

TO263 Pin Configuration G S D G D S BVDSS 100V RDSON 3.6m ID 190A Features
* 100V,190A, RDS(ON) =3.6mΩ@VGS.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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