PDH0980 mosfets equivalent, n-channel mosfets.
* 100V,150A, RDS(ON) =4.2mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* N.
TO263 Pin Configuration
G S
D
G
D S
BVDSS 100V
RDSON 4.2m
ID 150A
Features
* 100V,150A, RDS(ON) =4.2mΩ@VG.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
TAGS
Download (Size : 630.59KB)