PDH4960 datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 40V, 150A, RDS(ON) =3.8mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* MB / VGA / Vcore
* POL.

Application

TO263 Pin Configuration D D SG G S BVDSS 40V RDSON 3.8m ID 150A Features
* 40V, 150A, RDS(ON) =3.8mΩ@VGS =.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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