PDH3960 Datasheet, Potens semiconductor

* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB .

TO263 Pin Configuration D D G S G S BVDSS 30V RDSON 3m ID 176A Features
* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.