* 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V
* Worldwide Smallest Package : 1x0.6x0.45 mm
* Fast switching
* Green Device Available
* Suit for 1.2V Gate Dri.

SOT883 Pin Configuration D S G D S G S PDEU2320W BVDSS 20V RDSON 350m ID 500mA Features
* 20V,500mA, RDS.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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