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Potens semiconductor

PDEU2319Z Datasheet Preview

PDEU2319Z Datasheet

P-Channel MOSFETs

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20V P-Channel MOSFETs
PDEU2319Z
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT323 Pin Configuration
D
D
S
G
G
S
BVDSS
-20V
RDSON
600m
ID
-400mA
Features
-20V,-400mA, RDS(ON) =600mΩ@VGS = -4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for -1.5V Gate Drive Applications
Applications
Notebook
Load Switch
Battery Protection
Hand-held Instruments
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous (TC=25)
Drain Current Continuous (TC=100)
Drain Current Pulsed1
Power Dissipation (TC=25)
Power Dissipation Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Rating
-20
±8
-400
-250
-1.6
275
2.2
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
mW
mW/
Typ.
---
Max.
450
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDEU2319Z Datasheet Preview

PDEU2319Z Datasheet

P-Channel MOSFETs

No Preview Available !

20V P-Channel MOSFETs
PDEU2319Z
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VDS=-20V , VGS=0V , TJ=25
VDS=-16V , VGS=0V , TJ=125
VGS=±8V , VDS=0V
Min.
-20
---
---
---
---
Typ.
---
-0.01
---
---
---
Max.
---
---
-1
-10
±20
Unit
V
V/
uA
uA
uA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
VGS=-4.5V , ID=-0.3A
VGS=-2.5V , ID=-0.2A
VGS=-1.8V , ID=-0.1A
VGS=-1.5V , ID=-0.1A
VGS=-1.2V , ID=-0.1A
VGS=VDS , ID =-250uA
--- 440 600
--- 610 850
--- 810 1200 m
1020 1600
--- 1800 3000
-0.3 -0.6 -1.0
V
--- 3 --- mV/
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge2 , 3
Gate-Source Charge2 , 3
Gate-Drain Charge2 , 3
Turn-On Delay Time2 , 3
Rise Time2 , 3
Turn-Off Delay Time2 , 3
Fall Time2 , 3
VDS=-10V , VGS=-4.5V , ID=-0.2A
VDD=-10V , VGS=-4.5V , RG=10
ID=-0.2A
Ciss Input Capacitance
Coss Output Capacitance
VDS=-10V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
---
---
---
---
---
---
---
---
---
---
1
0.28
0.18
8
5.2
30
18
40
15
6.5
2
0.5
0.4
16
10
60
36
78
30
13
nC
ns
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-0.2A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
-0.4
-0.8
-1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDEU2319Z
Description P-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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