PDEU2319Z Datasheet | Potens semiconductor

Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT323 Pin Configuration BVDSS -20V RDSON 600m ID -400m A Features - -20V,-400m A, RDS(ON) =600mΩ@VGS = -4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for -1.5V Gate Drive Applications Applications - Notebook - Load Switch - Battery Protection - Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃)...