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PDEU2319Y - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -20V,-400mA, RDS(ON) =600mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.5V Gate Drive.

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Datasheet Details

Part number PDEU2319Y
Manufacturer Potens semiconductor
File Size 667.58 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDEU2319Y Datasheet
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20V P-Channel MOSFETs PDEU2319Y General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT523 Pin Configuration D D S G G S BVDSS -20V RDSON 600m ID -400mA Features  -20V,-400mA, RDS(ON) =600mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.
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