PDD4943-1 datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* -40V, -22A, RDS(ON) =40mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* 100% PB free and Green Device Available Ap.

Application

TO252 Pin Configuration D G S G D S BVDSS -40V RDSON 40m ID -22A Features
* -40V, -22A, RDS(ON) =40mΩ@VGS = .

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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