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PDD4963 - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -40V, -45A, RDS(ON) =17mΩ@VGS = -10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDD4963
Manufacturer Potens semiconductor
File Size 464.81 KB
Description P-Channel MOSFET
Datasheet download datasheet PDD4963 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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