PDD4912-1 datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* 40V,23A, RDS(ON) =30mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* 100% PB free and Green Device Available Appli.

Application

TO252 Pin Configuration D S G G D S BVDSS 40V RDSON 30m ID 23A Features
* 40V,23A, RDS(ON) =30mΩ@VGS = 10.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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