PDD3960 datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 30V, 90A, RDS(ON) =2.6mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB.

Application

TO252 Pin Configuration D G S G D S BVDSS 30V RDSON 2.6m ID 90A Features
* 30V, 90A, RDS(ON) =2.6mΩ@VGS = 10.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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