PDD3959 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

📥 Download Datasheet

PDD3959 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDD3959
Manufacturer	Potens semiconductor
File Size	452.32 KB
Description	P-Channel MOSFETs
Datasheet	PDD3959 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by Potens semiconductor

Part Number	Description
PDD3906	N-Channel MOSFET
PDD3907	P-Channel MOSFET
PDD3908	N-Channel MOSFETs
PDD3910	N-Channel MOSFETs
PDD3912	N-Channel MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S PDD3959 BVDSS -30V RDSON 4.5m ID -85A Features  -30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.