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Potens semiconductor

PDD3959 Datasheet Preview

PDD3959 Datasheet

P-Channel MOSFETs

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30V P-Channel MOSFETs
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
TO252 Pin Configuration
D
S
G
G
D
S
PDD3959
BVDSS
-30V
RDSON
4.5m
ID
-85A
Features
-30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V
Fast switching
Green Device Available
Suit for -4.5V Gate Drive Applications
Applications
Motor Driver Applications
POL Applications
Load Switch
LED Application
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed1
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Rating
-30
±20
-85
-54
-340
104
0.83
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Typ.
---
---
Max.
62
1.2
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.01




Potens semiconductor

PDD3959 Datasheet Preview

PDD3959 Datasheet

P-Channel MOSFETs

No Preview Available !

30V P-Channel MOSFETs
PDD3959
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=-250uA
Reference to 25 , ID=-1mA
VDS=-30V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
-30
---
---
---
---
Typ.
---
-0.03
---
---
---
Max.
---
---
-1
-10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=-10V , ID=-30A
VGS=-4.5V , ID=-20A
VGS=VDS , ID =-250uA
VDS=-10V , ID=-5A
--- 3.5 4.5 m
--- 5
7
-1.2 -1.6 -2.2
m
V
--- 4 --- mV/
--- 25 ---
S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge2 , 3
Gate-Source Charge2 , 3
Gate-Drain Charge2 , 3
Turn-On Delay Time2 , 3
Rise Time2 , 3
Turn-Off Delay Time2 , 3
Fall Time2 , 3
VDS=-15V , VGS=-10V , ID=-10A
VDD=-15V , VGS=-10V , RG=6
ID=-1A
---
---
---
---
---
---
---
108 150
15 25
17.4 30
28 56
16 32
178 340
72 140
nC
ns
Ciss Input Capacitance
Coss Output Capacitance
VDS=-25V , VGS=0V , F=1MHz
--- 6220 9000
--- 782 1100 pF
Crss Reverse Transfer Capacitance
--- 412 600
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
-85
-170
-1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.01


Part Number PDD3959
Description P-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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