PDD3912 datasheet, mosfets equivalent, Potens semiconductor

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Features and benefits

* 30V,28A, RDS(ON) =18mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB .

Application

TO252 Pin Configuration D D S G G S BVDSS 30V RDSON 18m ID 28A Features
* 30V,28A, RDS(ON) =18mΩ @VGS = 1.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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