PDD3808Z mosfets equivalent, n-channel mosfets.
* 30V,42A, RDS(ON) =9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
Applications
* MB / VGA / Vcore
* POL App.
TO252-4L Dual Pin Configuration
D1
D2 D1
S1G1S2G2
G1
G2 S1
D2 S2
BVDSS 30V
RDSON 9m
ID 42A
Features
* 30V.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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