PDD30N15 datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 150V,25A, RDS(ON) 65mΩ@VGS = 10V
* VGS Guarantee ± 25V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Not.

Application

TO252 Pin Configuration D SG G D S BVDSS 150V RDSON 65m ID 25A Features
* 150V,25A, RDS(ON) 65mΩ@VGS = 10V <.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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