PDC4960X datasheet, mosfets equivalent, Potens semiconductor

Features and benefits

* 40V, 100A, RDS(ON) =2.8mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* MB / VGA / Vcore
* POL.

Application

PPAK5x6 Pin Configuration DDDD S S SG G D S BVDSS 40V RDSON 2.8m ID 100A Features
* 40V, 100A, RDS(ON) =2.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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