* 40V, 35A, RDS(ON)=9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Notebook
* Load Switch
.

PPAK3x3 Pin Configuration DDDD S S SG G D S BVDSS 40V RDSON 9m ID 35A Features
* 40V, 35A, RDS(ON)=9mΩ@VGS.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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