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Potens semiconductor

PDC4902X Datasheet Preview

PDC4902X Datasheet

N-Channel MOSFETs

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40V N-Channel MOSFETs
PDC4902X
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PPAK5X6 Pin Configuration
DDDD
S SSG
G
D
S
BVDSS
40V
RDSON
2.2m
ID
140A
Features
40V,140A, RDS(ON) =2.2mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
Green Device Available
Applications
PowerTools
Load Switch
LED applications
Motor Drive Applications
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25) (Chip Limitation)
Drain Current – Continuous (TC=100) (Chip Limitation)
Drain Current – Pulsed1
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current2
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
±20
140
88
560
360
85
142
1.14
-50 to 150
-50 to 150
Units
V
V
A
A
A
mJ
A
W
W/
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
0.88
Unit
/W
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDC4902X Datasheet Preview

PDC4902X Datasheet

N-Channel MOSFETs

No Preview Available !

40V N-Channel MOSFETs
PDC4902X
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=250uA
VDS=40V , VGS=0V , TJ=25
VDS=32V , VGS=0V , TJ=125
VGS=±20V , VDS=0V
Min.
40
---
---
---
Typ.
---
---
---
---
Max.
---
1
10
±100
Unit
V
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
VGS=10V , ID=30A
VGS=4.5V , ID=20A
VGS=VDS , ID =250uA
VDS=10V , ID=10A
--- 1.7 2.2 m
‘--- 2.1 3 m
1 1.6 2.5 V
--- 45 ---
S
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Total Gate Charge3,4
Gate-Source Charge3,4
Gate-Drain Charge3,4
Turn-On Delay Time3,4
Rise Time3,4
Turn-Off Delay Time3,4
Fall Time3,4
VDS=20V , VGS=4.5V , ID=10A
VDD=20V , VGS=10V , RG=10
ID=10A
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, F=1MHz
--- 70 140
--- 15 32 nC
--- 40 80
--- 24.6 48
--- 62.8 120
--- 224 440
ns
--- 162 320
--- 8000 12000
--- 550 1000 pF
--- 420 800
--- 1.2 2.4
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
VGS=0V,IS=20A , di/dt=100A/µs
TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=85A., Starting TJ=25
3. The data tested by pulsed , pulse width 300us , duty cycle 2%.
4. Essentially independent of operating temperature.
Min.
---
---
---
---
---
Typ.
---
---
---
32
19
Max.
140
280
1
---
---
Unit
A
A
V
ns
nC
Potens semiconductor corp.
2
Ver.1.00


Part Number PDC4902X
Description N-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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