MX1011B200Y Datasheet | Philips Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product specification Supersedes data of January 1995 1997 Feb 18 Philips Semiconductors Microwave power transistor Product specification Features - Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor - Diffused emitter ballasting resistors improve ruggedness - Interdigitated emitter-base structure provides high emitter efficiency - Gold metallization with barrier realizes very stable characteristics and excellent lifetime - Multicell geometry improves power sharing reduces thermal resistance - Internal input and output prematching networks allow an easier design of circuits. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C narrowband amplifier. MODE OF OPERATION CONDITIONS f VCC PL Gp (GHz) (V) (W) (d B) Class C tp = 10 µs; δ = 1% 1.09 50 200 ≥7.5 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange ηC (%) ≥45 APPLICATIONS Intended for use in mon base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth. ok, 4 columns 3 Top view 1 2 b MAM045 c...