Datasheet Details
| Part number | MX1011B200Y |
|---|---|
| Manufacturer | Philips Semiconductors (now NXP Semiconductors) |
| File Size | 88.46 KB |
| Description | Microwave power transistor |
| Download | MX1011B200Y Download (PDF) |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product specification Supersedes data of January 1995 1997 Feb 18 Philips Semiconductors Microwave power transistor Product.
| Part number | MX1011B200Y |
|---|---|
| Manufacturer | Philips Semiconductors (now NXP Semiconductors) |
| File Size | 88.46 KB |
| Description | Microwave power transistor |
| Download | MX1011B200Y Download (PDF) |
|
|
|
1 collector 2 emitter 3 base connected to flange ηC (%) ≥45 APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth.
Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth.
ok, 4 columns 3 Top view 1 2 b 3 MAM045 c e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
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