MX1011B200Y transistor equivalent, microwave power transistor.
* Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Inte.
up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigi.
1 collector 2 emitter 3 base connected to flange
ηC (%)
≥45
APPLICATIONS
Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium .
Image gallery
TAGS