MX1011B200Y Datasheet (PDF) Download
Philips Semiconductors
MX1011B200Y

Overview

  • Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
  • Diffused emitter ballasting resistors improve ruggedness
  • Interdigitated emitter-base structure provides high emitter efficiency
  • Gold metallization with barrier realizes very stable characteristics and excellent lifetime
  • Multicell geometry improves power sharing reduces thermal resistance
  • Internal input and output prematching networks allow an easier design of circuits.