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MX1011B200Y Datasheet

Manufacturer: Philips Semiconductors (now NXP Semiconductors)
MX1011B200Y datasheet preview

Datasheet Details

Part number MX1011B200Y
Datasheet MX1011B200Y-Philips.pdf
File Size 88.46 KB
Manufacturer Philips Semiconductors (now NXP Semiconductors)
Description Microwave power transistor
MX1011B200Y page 2 MX1011B200Y page 3

MX1011B200Y Overview

1 collector 2 emitter 3 base connected to flange ηC (%) ≥45 APPLICATIONS Intended for use in mon base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth. ok, 4 columns 3 Top view 1 2 b 3 MAM045 c e DESCRIPTION NPN silicon planar epitaxial microwave power...

MX1011B200Y Key Features

  • Suitable for short and medium pulse
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Part Number Description

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