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MX1011B200Y

MX1011B200Y is Microwave power transistor manufactured by Philips Semiconductors.
MX1011B200Y datasheet preview

MX1011B200Y Datasheet

Part number MX1011B200Y
Datasheet MX1011B200Y Datasheet PDF (Download)
File Size 88.46 KB
Manufacturer Philips Semiconductors
Description Microwave power transistor
MX1011B200Y page 2 MX1011B200Y page 3

MX1011B200Y Overview

1 collector 2 emitter 3 base connected to flange ηC (%) ≥45 APPLICATIONS Intended for use in mon base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth. ok, 4 columns 3 Top view 1 2 b 3 MAM045 c e DESCRIPTION NPN silicon planar epitaxial microwave power...

MX1011B200Y Key Features

  • Suitable for short and medium pulse

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