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MX1011B200Y Datasheet, Philips

MX1011B200Y transistor equivalent, microwave power transistor.

MX1011B200Y Avg. rating / M : 1.0 rating-11

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MX1011B200Y Datasheet

Features and benefits


* Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Inte.

Application

up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigi.

Description

1 collector 2 emitter 3 base connected to flange ηC (%) ≥45 APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium .

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MX1011B200Y Page 1 MX1011B200Y Page 2 MX1011B200Y Page 3

TAGS

MX1011B200Y
Microwave
power
transistor
MX101C49
MX105A
MX10C805x
Philips

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