900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Panasonic Electronic Components Datasheet

PNZ312D Datasheet

Dual Division Silicon PIN Photodiode

No Preview Available !

PIN Photodiodes
PNZ312D
Dual Division Silicon PIN Photodiode
For optical information systems
Features
Fast response : tr, tf = 10 ns (typ.)
Good photo current linearity
Low dark current : ID = 20 nA (max.)
Small size plastic package (flat type)
Adoption of visible light cutoff resin
Applications
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
Position sensor for automatic assembly lines
Eye sensor for industrial robots
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VR
PD
Topr
Tstg
Ratings
30
30
–25 to +85
–30 to +100
Unit
V
mW
˚C
˚C
5.0±0.1
2.54±0.1
43
Unit : mm
1.8±0.3
1.0±0.2
AB
4-0.6
+0.1
–0.2
4-0.5±0.1
1
10˚
1.0
0.6
2
10˚
0.2
+0.1
–0.05
1: Anode A
2: Common Cathode
3: Anode B
4: Common Cathode
Note) The PNZ312D package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
Dimensions of detection area
3.5
1.6 1.6
0.04
Unit : mm
AB
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Reverse voltage (DC)
VR IR = 10µA
30 V
Dark current
Photo current
Peak sensitivity wavelength
Response time
ID
IL*3
λP
tr, tf*2
VR = 10V
VR = 10V, L = 1000 lx*1
VR = 10V
VR = 10V, RL = 1k
20 nA
8 12
µA
940 nm
10 ns
Capacitance between pins Ct VR = 10V, f = 1MHz
5 pF
Acceptance half angle
θ Measured from the optical axis to the half power point
65
deg.
Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values
corresponding to individual elements.
*1 Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source.
*2 Semiconductor laser light source ( λ = 800 nm )
*3 Photo current measurement circuit
+10V
R1 R2
R1 = R2
1


Panasonic Electronic Components Datasheet

PNZ312D Datasheet

Dual Division Silicon PIN Photodiode

No Preview Available !

PNZ312D
PIN Photodiodes
PD — Ta
40
30
IL — L
10 3
VR = 10V
Ta = 25˚C
T = 2856K
10 2
20 10
10 1
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
10 –1
10
10 2 10 3
Illuminance L (lx)
10 4
IL — Ta
160 LVR==101000Vlx
140 T = 2856K
120
100
80
60
40
20
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
ID — VR
ID — Ta
1 10
Ta = 25˚C
VR = 10V
10 –1
1
10 –1
Spectral sensitivity characteristics
100 VR = 10V
Ta = 25˚C
80
60
40
20
10 –2
0
4 8 12 16 20 24 28 32
Reverse voltage VR (V)
10 –2
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
100
80
60
40
20
0
80
40 0 40
Angle θ (deg.)
80
Ct — VR
tr , tf — RL
10 3
f = 1MHz
Ta = 25˚C
10 4
Sig.IN VR=10V
Sig. 90%
10 2
10 3 50
OUT
RL tr
td
10%
tf
10 10 2
1 10
10 –1
10 –1
1 10
Reverse voltage VR (V)
10 2
1
10 –1
1
Ta = 25˚C
10 10 2
External load resistance RL (k)
2


Part Number PNZ312D
Description Dual Division Silicon PIN Photodiode
Maker Panasonic Semiconductor
PDF Download

PNZ312D Datasheet PDF






Similar Datasheet

1 PNZ312D Dual Division Silicon PIN Photodiode
Panasonic Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy