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PNZ313 - PIN Photodiode

Features

  • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ. ) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ. ) Wide detection area, wide acceptance half angle : θ = 65 deg. (typ. ) Adoption of visible light cutoff resin 13 min. 2.3±0.3 2-1.2±0.15 2-0.6±0.15 0.41±0.15 2 1 5.08±0.25 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 8.0±0.5 5.0 7.0±0.5 Anode mark ø1.6 Device center Features Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.) Adoption of visible light cutoff resin 13 min. 2.3±0.3 2-1.2±0.15 2-0.6±0.15 0.41±0.15 2 1 5.08±0.25 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 100 –30 to +85 – 40 to +100 Unit V mW ˚C ˚C 2.8±0.
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