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PNZ150L Datasheet

Silicon NPN Phototransistor

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Phototransistors
PNZ150L
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
IC
PC
Topr
Tstg
Ratings
20
20
100
–25 to +85
–30 to +100
Unit
V
mA
mW
˚C
˚C
4.5±0.3
ø3.5±0.2
Unit : mm
4.2±0.3
2.3 1.9
2-1.12
2-0.45±0.15
0.4±0.15
1.2
2-0.6±0.15
2-0.45±0.15
12
2.54
R1.75
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCEO = 10V
0.01 0.2 µA
Sensitivity to infrared emitters SIR*1 VCE = 10V, H = 15µW/cm2
16
µA
Collector saturation voltage VCE(sat) VCE = 10V, H = 15µW/cm2
0.2 0.5 V
Peak sensitivity wavelength λP VCEO = 10V
800 nm
Response time
tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100
4
µs
Acceptance half angle
θ Measured from the optical axis to the half power point
35
deg.
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Response time measurement circuit
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1


Panasonic Electronic Components Datasheet

PNZ150L Datasheet

Silicon NPN Phototransistor

No Preview Available !

Phototransistors
PNZ150L
PC — Ta
120
100
80
60
40
20
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
20
Ta = 25˚C
T = 2856K
16
L = 2000 lx
1750 lx
12 1500 lx
1250 lx
1000 lx
8
750 lx
4 500 lx
250 lx
0
0 4 8 12 16
Collector to emitter voltage
100 lx
20 24
VCE (V)
ICE(L) — L
10 2
VCE = 10V
Ta = 25˚C
T = 2856K
10
1
10 –1
10 –2
10 –3
1
10 10 2 10 3
Illuminance L (lx)
10 4
ICE(L) — Ta
10 2
VCE = 10V
T = 2856K
ICEO — Ta
10
VCE = 10V
1
L = 1000 lx
10 10 –1
500 lx
10 –2
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
60
40
20
1
– 40 0
40 80 120
Ambient temperature Ta (˚C )
10 –3
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 4
VCC = 10V
Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 4
VCC = 10V
Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
2


Part Number PNZ150L
Description Silicon NPN Phototransistor
Maker Panasonic Semiconductor
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PNZ150L Datasheet PDF






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