| Title | |
| Description | High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Features q Though low voltage operation, performance is equivalent to the conventional product. q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available. 3SK302 0.65±0.15 +0.2 2.8 –0.3 +0.2 1.5 –0.3 Unit : mm 0.65±0.15 0.5... |
| Features |
q Though low voltage operation, performance is equivalent to the conventional product.
q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available.
3SK302
0.65±0.15
+0.2
2.8 –0.3 +0.2 1.5 –0.3 Unit : mm 0.65±0.15 0.5R 41 2.9±0.2 1.9±0.2 0.95 0.95 32 +0.1 0.4 –0.05 0 to 0.1 +0.1 0.16 ... |
| Datasheet |
 3SK306 Datasheet - 24.66KB |
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| Stock | In stock |
| Price | |
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| Distributor | Stock | Price | BuyNow |
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