Download the 3SK306 datasheet PDF.
This datasheet also includes the 3SK302 variant, as both parts are published together in a single manufacturer document.
High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS For UHF.
Key Features
q Though low voltage operation, performance is equivalent to the conventional product. q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available. 3SK302
0.65±0.15
+0.2
2.8.
0.3
+0.2
1.5.
0.3
Unit : mm
0.65±0.15
0.5R 41
2.9±0.2 1.9±0.2 0.95 0.95
32
+0.1
0.4.
0.05
0 to 0.1
+0.1
0.16.
0.06
+0.2
1.1.
0.1 0.8
s Absolute Maximum Ratings (Ta = 25˚C)
Parameter Drain-Source voltage Gate 1-Source.
