PJP2N60 - 600V N-Channel Enhancement Mode MOSFET

PanJit Semiconductor

Features

2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A.
Low ON Resistance.
Fast Switching.
Low Gate Charge.
Fully Characterized Avalanche Voltage and Current.
Specially Desigened for AC Adapter, Battery Charge and SMPS.
In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

PJP2N60 600v n-channel enhancement mode mosfet by PanJit Semiconductor - Datasheet Preview

Datasheet Details

Part number	PJP2N60
Manufacturer	PanJit Semiconductor
File Size	228.94 KB
Description	600V N-Channel Enhancement Mode MOSFET
Datasheet	PJP2N60 Datasheet

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Full PDF Text Transcription (Reference)

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PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.