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NXH020P120MNF1PG - SiC Module

Download the NXH020P120MNF1PG datasheet PDF. This datasheet also covers the NXH020P120MNF1PTG variant, as both devices belong to the same sic module family and are provided as variant models within a single manufacturer datasheet.

General Description

ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet.

Figure 1.

Rev.

Key Features

  • 20 mW/1200 V SiC MOSFET Half Bridge.
  • Thermistor.
  • Options with Pre.
  • applied Thermal Interface Material (TIM) and without Pre.
  • applied TIM.
  • Press.
  • fit Pins Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NXH020P120MNF1PTG-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package NXH020P120MNF1PTG, NXH020P120MNF1PG The NXH020P120MNF1 is a power module containing an 20 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 20 mW/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Electric Vehicle Charging Stations • Industrial Power DATA SHEET www.onsemi.com PIM18 33.8x42.