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NXH020P120MNF1PTG - SiC Module

Datasheet Summary

Description

ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet.

Figure 1.

Rev.

Features

  • 20 mW/1200 V SiC MOSFET Half Bridge.
  • Thermistor.
  • Options with Pre.
  • applied Thermal Interface Material (TIM) and without Pre.
  • applied TIM.
  • Press.
  • fit Pins Typical.

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Full PDF Text Transcription

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Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package NXH020P120MNF1PTG, NXH020P120MNF1PG The NXH020P120MNF1 is a power module containing an 20 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 20 mW/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Electric Vehicle Charging Stations • Industrial Power DATA SHEET www.onsemi.com PIM18 33.8x42.
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