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NXH020U90MNF2PTG - SiC

Datasheet Summary

Description

See detailed ordering and shipping information on page 5 of this data sheet.

Rev.

Features

  • Neutral Point: 10 mW, 900 V SiC MOSFETs.
  • Boost Diodes: 100 A, 1200 V SiC Diodes.
  • Thermistor.
  • Pre.
  • Applied TIM.
  • Press.
  • Fit Pins.
  • These Devices are Pb.
  • Free, Halide Free and are RoHS Compliant Typical.

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Full PDF Text Transcription

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Silicon Carbide (SiC) Module – EliteSiC, 2 x 10 mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package NXH020U90MNF2PTG The NXH020U90MNF2 is a power module containing a Vienna Rectifier module consisting of two 10 mW, 900 V SiC MOSFETs, two 100 A, 1200 V SiC diodes and a thermistor in an F2 package. Features • Neutral Point: 10 mW, 900 V SiC MOSFETs • Boost Diodes: 100 A, 1200 V SiC Diodes • Thermistor • Pre−Applied TIM • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • Electric Vehicle Charging Stations • Uninterruptible Power Supplies • Energy Storage Systems DATA SHEET www.onsemi.com PACKAGE PICTURE PIM20 56.7x42.
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