* AEC−Q101 Qualified
* Max Junction Temperature 150°C
* Typ. RDS(on) = 19.9 mΩ
* Ultra Low Gate Charge (Typ. QG = 236 nC)
* Low Effective Output Capac.

* Automotive PHEV−BEV DC−DC Converter
* Automotive Onboard Charger for PHEV−BEV DATA SHEET www.onsemi.com BVDS.

SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored t.

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