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NVHL025N065SC1 - SiC MOSFET

Features

  • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 164 nC).
  • Low Capacitance (Coss = 278 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

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MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ.
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