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MOSFET – Power, Single, N-Channel, SO-8FL
30 V, 1.7 mW, 136 A
NTMFS4C022N
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Notes 1, 3)
Steady State
TC = 25°C TC = 25°C
VDSS VGS ID
PD
30
V
"20 V
136
A
64
W
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 2, 3) Steady
Power Dissipation RqJA State TA = 25°C
PD
(Notes 1, 2, 3)
30
A
3.
NTMFS4C022N Datasheet
