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NTMFS4C020N
Power MOSFET
30 V, 0.9 mW, 303 A, Single N−Channel, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Notes 1, 3)
Steady State
TC = 25°C TC = 25°C
VDSS VGS ID
PD
30 "20 303
V V A
134 W
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2, 3)
Steady State
TA = 25°C TA = 25°C
ID PD
47 A 3.
NTMFS4C020N Datasheet
