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NTMFS4C027N - Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number NTMFS4C027N
Manufacturer ON Semiconductor
File Size 84.15 KB
Description Power MOSFET
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NTMFS4C027N Power MOSFET 30 V, 52 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 80°C Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA (Note
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