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NDP10N60Z - N-Channel Power MOSFET

Features

  • Low ON Resistance Low Gate Charge Zener Diode.
  • protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb.
  • Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain.
  • to.
  • Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Ga.

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Datasheet Details

Part number NDP10N60Z
Manufacturer onsemi
File Size 163.16 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NDP10N60Z Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.0 mH, ID = 10 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.
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