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NDF08N50Z, NDP08N50Z N-Channel Power MOSFET 500 V, 0.69 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
VDSS 500 V
http://onsemi.com
RDS(ON) (TYP) @ 3.6 A 0.69 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 7.5 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H.
NDP08N50Z Datasheet
